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DSEP 29-03A HiPerFREDTM Epitaxial Diode with soft recovery IFAV = 30 A VRRM = 300 V trr = 30 ns A C VRSM V 300 VRRM V Type TO-220 AC C 300 DSEP 29-03A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 145C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 3 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 35 30 300 1.2 0.3 -55...+175 175 -55...+150 A A Features A q mJ A C C C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 165 0.4...0.6 2 Applications q q q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 30 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 250 1 0.93 1.26 0.9 0.5 mA mA V V K/W K/W ns q q q q q VF y RthJC RthCH trr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages q IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms TVJ = 100C 30 7 A q q Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see outlines.pdf (c) 2000 IXYS All rights reserved 1-2 008 IXYS reserves the right to change limits, test conditions and dimensions. DSEP 29-03A 60 A IF 40 TVJ=150C TVJ=100C TVJ= 25C 20 200 5 0 0.0 0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt 10 400 Qr 800 TVJ = 100C nC 600 IF = 60A IF = 30A IF = 15A 15 VR = 150V IRM 20 IF = 60A IF = 30A IF = 15A 30 A 25 TVJ = 100C VR = 150V 0.5 1.0 VF V 1.5 Fig. 1 Forward current IF versus VF 1.4 Fig. 2 Reverse recovery charge Qr versus -diF/dt 90 ns TVJ = 100C VR = 150V Fig. 3 Peak reverse current IRM versus -diF/dt 14 V VFR 12 tfr 0.8 VFR 0.6 10 0.4 0.2 8 0.0 600 A/ms 1000 800 diF/dt TVJ = 100C IF = 30A 1.2 s 1.0 tfr 1.2 Kf 1.0 IRM trr 80 70 IF = 60A 60 Qr IF = 30A IF = 15A 0.8 0.6 50 0.4 0 40 80 120 C 160 TVJ 40 0 200 400 600 -diF/dt 800 A/ms 1000 0 200 400 Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.005 0.0003 0.016 0.1 ZthJC 0.01 1 2 3 0.001 0.0001 0.00001 DSEP 29-03A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case 008 NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 |
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